BJT & Bipolar Transistors

A Bipolar Transistor or BJT (Bipolar Junction Transistor) is a solid state, three-pin device made from three layers of silicon. A BJT is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive negative).
How a Bipolar transistor is made
A bipolar transistor is made by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.
What does a bipolar transistor do?
As we said before a bipolar transistor has two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.
Types of transistor
Transistors are available in panel, surface and through hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.
Where are bipolar transistors used?
Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).
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Rincian Komponen Brand Stock Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Minimum DC Current Gain Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Maximum Collector Emitter Saturation Voltage Maximum Base Emitter Saturation Voltage Height Length Width Minimum Operating Temperature Maximum Operating Temperature Transistor Material Diameter
ON Semi NSVF4015SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
  • S$ 0,288
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ON Semiconductor 3000 NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4017SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
  • S$ 0,288
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ON Semiconductor 3000 NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
2N4922G NPN Transistor, 1 (Continuous) A, 3 (Peak) A, 60 V dc, 3-Pin TO-225
  • S$ 0,422
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ON Semiconductor 0 NPN 1 (Continuous) A, 3 (Peak) A 60 V dc TO-225 Through Hole 30 W 10 Single 60 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 0.6 V dc 1.3 V dc 11.1mm 7.8mm 3mm -65 °C +150 °C Si -
2N4922G NPN Transistor, 1 (Continuous) A, 3 (Peak) A, 60 V dc, 3-Pin TO-225 ON Semiconductor 0 NPN 1 (Continuous) A, 3 (Peak) A 60 V dc TO-225 Through Hole 30 W 10 Single 60 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 0.6 V dc 1.3 V dc 11.1mm 7.8mm 3mm -65 °C +150 °C Si -
2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225
  • S$ 0,471
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ON Semiconductor 0 NPN 4 A 60 V dc TO-225 Through Hole 40 W 25 Single 60 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 1.4 V dc - 11.1mm 7.8mm 3mm -65 °C +150 °C Si -
2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225 ON Semiconductor 0 NPN 4 A 60 V dc TO-225 Through Hole 40 W 25 Single 60 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 1.4 V dc - 11.1mm 7.8mm 3mm -65 °C +150 °C Si -
2N5192G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225
  • S$ 0,47
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ON Semiconductor 0 NPN 4 A 80 V dc TO-225 Through Hole 40 W 20 Single 80 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 1.4 V dc - 11.1mm 7.8mm 3mm -65 °C +150 °C Si -
2N5192G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225 ON Semiconductor 0 NPN 4 A 80 V dc TO-225 Through Hole 40 W 20 Single 80 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 1.4 V dc - 11.1mm 7.8mm 3mm -65 °C +150 °C Si -
2N6042G PNP Bipolar Transistor, 8 A, 100 V dc, 3-Pin TO-220
  • S$ 0,941
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ON Semiconductor 0 PNP 8 A 100 V dc TO-220 Through Hole 75 W 1000 Single 100 V dc 5 V dc 1 MHz 3 1 10.53 x 4.83 x 15.75mm 2 V dc 4.5 V dc 15.75mm 10.53mm 4.83mm -65 °C +150 °C Si -
2N6043G NPN Bipolar Transistor, 8 A, 60 V dc, 3-Pin TO-220
  • S$ 0,856
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ON Semiconductor 0 NPN 8 A 60 V dc TO-220 Through Hole 75 W 1000 Single 60 V dc 5 V dc 1 MHz 3 1 10.53 x 4.83 x 15.75mm 2 V dc 4.5 V dc 15.75mm 10.53mm 4.83mm -65 °C +150 °C Si -
2N6284G NPN Transistor, 20 (Continuous) A, 40 (Peak) A, 100 V dc, 3-Pin TO-204AA
  • S$ 4,979
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ON Semiconductor 0 NPN 20 (Continuous) A, 40 (Peak) A 100 V dc TO-204AA Through Hole 160 W 100 Single 100 V dc 5 V dc 1 MHz 3 1 39.37 x 26.67 x 8.51mm 3 V dc 4 V dc 8.51mm 39.37mm 26.67mm -65 °C +200 °C Si -
2N6284G NPN Transistor, 20 (Continuous) A, 40 (Peak) A, 100 V dc, 3-Pin TO-204AA ON Semiconductor 0 NPN 20 (Continuous) A, 40 (Peak) A 100 V dc TO-204AA Through Hole 160 W 100 Single 100 V dc 5 V dc 1 MHz 3 1 39.37 x 26.67 x 8.51mm 3 V dc 4 V dc 8.51mm 39.37mm 26.67mm -65 °C +200 °C Si -
2N6287G PNP Transistor, 20 (Continuous) A, 40 (Peak) A, 100 V dc, 3-Pin TO-204AA
  • S$ 5,181
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ON Semiconductor 0 PNP 20 (Continuous) A, 40 (Peak) A 100 V dc TO-204AA Through Hole 160 W 100 Single 100 V dc 5 V dc 1 MHz 3 1 39.37 x 26.67 x 8.51mm 3 V dc 4 V dc 8.51mm 39.37mm 26.67mm -65 °C +200 °C Si -
2N6287G PNP Transistor, 20 (Continuous) A, 40 (Peak) A, 100 V dc, 3-Pin TO-204AA ON Semiconductor 0 PNP 20 (Continuous) A, 40 (Peak) A 100 V dc TO-204AA Through Hole 160 W 100 Single 100 V dc 5 V dc 1 MHz 3 1 39.37 x 26.67 x 8.51mm 3 V dc 4 V dc 8.51mm 39.37mm 26.67mm -65 °C +200 °C Si -
2SA2210-1E PNP Transistor, 20 A, -50 V, 3-Pin TO-220F
  • S$ 2,085
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ON Semiconductor 0 PNP 20 A -50 V TO-220F Through Hole 30 W 150 Single -50 V -6 V 1 MHz 3 1 10.16 x 4.7 x 15.87mm -500 mV -1.2 V 15.87mm 10.16mm 4.7mm - +150 °C - -
2SA2210-1E PNP Transistor, 20 A, -50 V, 3-Pin TO-220F ON Semiconductor 0 PNP 20 A -50 V TO-220F Through Hole 30 W 150 Single -50 V -6 V 1 MHz 3 1 10.16 x 4.7 x 15.87mm -500 mV -1.2 V 15.87mm 10.16mm 4.7mm - +150 °C - -
2SA2222SG PNP Bipolar Transistor, 10 A, -50 V, 3-Pin TO-220F-3FS
  • S$ 0,789
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ON Semiconductor 0 PNP 10 A -50 V TO-220F-3FS Through Hole 25 W 150 Single -50 V -6 V 1 MHz 3 1 10.16 x 4.7 x 15.87mm -500 mV -1.2 V 15.87mm 10.16mm 4.7mm -55 °C +150 °C - -
2SC5707-E NPN Transistor, 8 A, 100 V, 3 + Tab-Pin TP
  • S$ 0,521
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ON Semiconductor 0 NPN 8 A 100 V TP Through Hole 15 W 200 Single 100 V 6 V 1 MHz 3 + Tab 1 6.5 x 2.3 x 5.5mm 240 mV 1.2 V 5.5mm 6.5mm 2.3mm - +150 °C - -
2SC5707-E NPN Transistor, 8 A, 100 V, 3 + Tab-Pin TP ON Semiconductor 0 NPN 8 A 100 V TP Through Hole 15 W 200 Single 100 V 6 V 1 MHz 3 + Tab 1 6.5 x 2.3 x 5.5mm 240 mV 1.2 V 5.5mm 6.5mm 2.3mm - +150 °C - -
2SC6082-1E NPN Transistor, 15 A, 60 V, 3-Pin TO-220F
  • S$ 1,559
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ON Semiconductor 0 NPN 15 A 60 V TO-220F Through Hole 23 W 50 Single 60 V 6 V 1 MHz 3 1 10.16 x 4.7 x 15.87mm 400 mV 1.2 V 15.87mm 10.16mm 4.7mm - +150 °C - -
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