IGBTs

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors, Bipolar transistors and MOSFET.

What is a typical application of IGBTs?
• Electric motors
• Uninterruptible power supplies
• Solar panel installations
• Welders
• Power converters & inverters
• Inductive chargers
• Inductive cookers

How do IGBT transistors work?
IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure. IGBT transistors are widely used for switching electrical power in applications such as welding, electric cars, air conditioners, trains and uninterruptible power supplies.

What are the different types of IGBT Transistors?
There are various types of IGBT transistors and they are categorised by parameters such as maximum voltage, collector current, packaging type and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level, and the applications being considered.

What is a difference between MOSFETs and IGBTs?
An IGBTs do have a much lower forward voltage drop compared to a conventional MOSFET in a higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.
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Rincian Komponen Brand Stock Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Minimum Operating Temperature Maximum Operating Temperature Automotive Standard
ON Semiconductor FGH40T120SQDNL4 P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247 ON Semiconductor 0 160 A 1200 V ±30V 454 W 1 TO-247 Through Hole P 4 - Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 5000pF - -55 °C +175 °C -
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03 ON Semiconductor 0 60 A 650 V ±30V 333 W 1 TO-247 G03 Through Hole P 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 3813pF 50µJ -55 °C +175 °C -
ON Semiconductor FGY60T120SQDN IGBT, 120 A 1200 V, 3-Pin TO-247
  • S$ 8,927
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ON Semiconductor 0 120 A 1200 V ±25V 517 W 1 TO-247 Through Hole N 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 7147pF - -55 °C +175 °C -
ON Semiconductor FGY60T120SQDN IGBT, 120 A 1200 V, 3-Pin TO-247 ON Semiconductor 0 120 A 1200 V ±25V 517 W 1 TO-247 Through Hole N 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 7147pF - -55 °C +175 °C -
ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N
  • No. Stok RS 186-4565
  • Merek ROHM
  • Pbrk. No. Komp. RGS00TS65HRC11
ROHM 0 50 A 650 V ±30V 326 W 1 TO-247N Through Hole N 3 - Single 16mm 5mm 21mm 16 x 5 x 21mm 1568pF - -40 °C +175 °C AEC-Q101
ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N
  • S$ 4,449
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  • No. Stok RS 186-4264
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ROHM 0 50 A 650 V ±30V 326 W 1 TO-247N Through Hole N 3 - Single 16mm 5mm 21mm 16 x 5 x 21mm 1568pF - -40 °C +175 °C AEC-Q101
ON Semiconductor FGH40T120SQDNL4 P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247
  • S$ 8,944
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ON Semiconductor 450 160 A 1200 V ±30V 454 W 1 TO-247 Through Hole P 4 - Single 15.8mm 5.2mm 22.74 15.8 x 5.2 x 22.74mm 5000pF - -55 °C +175 °C -
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03
  • S$ 4,81
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ON Semiconductor 450 60 A 650 V ±30V 333 W 1 TO-247 G03 Through Hole P 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 3813pF 50µJ -55 °C +175 °C -
150V N-Ch 0.052R
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Vishay 0 - - - - - - - - - - - - - - - - - - - -
150V N-Ch 0.052R Vishay 0 - - - - - - - - - - - - - - - - - - - -
600V SuperJunction
  • S$ 5,311
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Vishay 0 - - - - - - - - - - - - - - - - - - - -
600V SuperJunction Vishay 0 - - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified N-CHANNEL 100-V (D-S)
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Vishay 0 - - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified N-CHANNEL 100-V (D-S) Vishay 0 - - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
  • S$ 2,599
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Vishay 0 - - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1 Vishay 0 - - - - - - - - - - - - - - - - - - - -
BM63767S-VC 6 IGBT, ±30 A 600 V, 25-Pin HSDIP
  • S$ 22,14
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  • No. Stok RS 185-0962
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ROHM 0 ±30 A 600 V - 59 W 6 HSDIP Through Hole - 25 - - 38mm 24mm 3.5mm 38 x 24 x 3.5mm - - -25 °C +125 °C -
BM63767S-VC 6 IGBT, ±30 A 600 V, 25-Pin HSDIP
  • No. Stok RS 185-1033
  • Merek ROHM
  • Pbrk. No. Komp. BM63767S-VC
ROHM 0 ±30 A 600 V - 59 W 6 HSDIP Through Hole - 25 - - 38mm 24mm 3.5mm 38 x 24 x 3.5mm - - -25 °C +125 °C -
D Series MOSFET N-CHANNEL 500V
  • S$ 2,554
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Vishay 0 - - - - - - - - - - - - - - - - - - - -
D Series MOSFET N-CHANNEL 500V
  • S$ 3,052
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Vishay 0 - - - - - - - - - - - - - - - - - - - -
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