MOSFETs

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Rincian Komponen Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
DMN65D8L-7 N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23 Diodes Inc DiodesZetex N 310 mA 60 V 4 Ω 2V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 540 mW 22 pF @ 25 V 0.87 nC @ 10 V 3 x 1.4 x 1.1mm 12.6 ns - 2.7 ns - 1.4mm 1.1mm 3mm - - +150 °C 1 -55 °C Si -
BSS138NH6433XTMA1 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon
  • S$ 0,079
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Infineon N 230 mA 60 V 3.5 Ω 1.4V 0.6V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 360 mW 32 pF @ 25 V 1 nC @ 10V 2.9 x 1.3 x 1mm 6.7 ns SIPMOS 2.3 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
2V7002KT1G N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 320 mA 60 V 2.5 Ω 2.3V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 420 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 3.04 x 1.4 x 1.01mm 55.8 ns - 12.2 ns - 1.4mm 1.01mm 3.04mm - - +150 °C 1 -55 °C Si -
2V7002LT1G N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 115 mA 60 V 13.5 Ω 2.5V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 225 mW, 300 mW 50 pF @ 25 V - 3.04 x 1.4 x 1.01mm 40 ns - 20 ns - 1.4mm 1.01mm 3.04mm - - +150 °C 1 -55 °C Si -
BSZ058N03LSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon Infineon N 40 A 30 V 8.9 mΩ 2.2V 1V -20 V, +20 V TSDSON Surface Mount 8 Single Enhancement Power MOSFET 45 W 1800 pF @ 15 V 22 nC @ 10 V 3.4 x 3.4 x 1.1mm 19 ns OptiMOS 3 4.6 ns - 3.4mm 1.1mm 3.4mm - - +150 °C 1 -55 °C Si -
BSS138WH6327XTSA1 N-Channel MOSFET, 280 mA, 60 V SIPMOS, 3-Pin SOT-323 Infineon
  • S$ 0,102
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Infineon N 280 mA 60 V 6 Ω 1.4V 0.6V -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Small Signal 500 mW 32 pF @ 25 V 1 nC @ 10 V 2 x 1.25 x 0.8mm 6.7 ns SIPMOS 2.2 ns - 1.25mm 0.8mm 2mm - - +150 °C 1 -55 °C Si -
DMG1016V-7 Dual N/P-Channel MOSFET, 640 mA, 870 mA, 20 V, 6-Pin SOT-563 Diodes Inc DiodesZetex N, P 640 mA, 870 mA 20 V 1.3 Ω, 700 mΩ 1V - -6 V, +6 V SOT-563 Surface Mount 6 Isolated Enhancement Small Signal 530 mW 59.76 pF@ -16 V, 60.67 pF@ 16 V 0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V 1.7 x 1.25 x 0.6mm 26.7 ns, 28.4 ns - 5.1 ns - 1.25mm 0.6mm 1.7mm - - +150 °C 2 -55 °C Si -
NTK3139PT1G P-Channel MOSFET, 870 mA, 20 V, 3-Pin SOT-723 ON Semiconductor ON Semiconductor P 870 mA 20 V 2.2 Ω 1.2V - -6 V, +6 V SOT-723 Surface Mount 3 Single Enhancement Power MOSFET 550 mW 113 pF @ -16 V - 1.25 x 0.85 x 0.55mm 32.7 ns - 9 ns - 0.85mm 0.55mm 1.25mm - - +150 °C 1 -55 °C Si -
DMP2008UFG-7 P-Channel MOSFET, 11 A, 20 V, 8-Pin POWERDI3333 Diodes Inc DiodesZetex P 11 A 20 V 17 mΩ 1V - -8 V, +8 V POWERDI3333 Surface Mount 8 Single Enhancement Power MOSFET 41 W 6909 pF @ -10 V 72 nC @ 4.5 V 3.35 x 3.35 x 0.85mm 291 ns - 22 ns - 3.35mm 0.85mm 3.35mm - - +150 °C 1 -55 °C Si -
BSS138NH6327XTSA2 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon
  • S$ 0,089
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Infineon N 230 mA 60 V 6 Ω 1.4V 0.6V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 360 mW 32 pF @ 25 V 1 nC @ 10 V 2.9 x 1.3 x 1mm 6.7 ns SIPMOS 2.3 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
FDMA530PZ P-Channel MOSFET, 6.8 A, 30 V PowerTrench, 6-Pin MLP ON Semiconductor ON Semiconductor P 6.8 A 30 V 35 mΩ - 1V -25 V, +25 V MLP Surface Mount 6 Single Enhancement Power MOSFET 2.4 W 805 pF @ 15 V 16 nC @ 10 V 2 x 2 x 0.75mm 43 ns PowerTrench 6 ns - 2mm 0.75mm 2mm - - +150 °C 1 -55 °C Si -
2N7002BKW,115 N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia Nexperia N 310 mA 60 V 2 Ω 2.1V 1.1V -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement - 330 mW 33 pF@ 10 V 0.5 nC 2.2 x 1.35 x 1mm 12 ns - 5 ns - 1.35mm 1mm 2.2mm - - +150 °C 1 -55 °C Si -
DMN2065UW-7 N-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-323 Diodes Inc DiodesZetex N 3.1 A 20 V 140 mΩ 1V - -12 V, +12 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Power MOSFET 700 mW 400 pF @ 10 V 5.4 nC @ 4.5 V 2.2 x 1.35 x 1mm 23.8 ns - 3.5 ns - 1.35mm 1mm 2.2mm - - +150 °C 1 -55 °C Si -
NTJD4105CT1G Dual N/P-Channel MOSFET, 1.1 A, 910 mA, 8 V, 20 V, 6-Pin SOT-363 ON Semiconductor ON Semiconductor N, P 1.1 A, 910 mA 8 V, 20 V 445 mΩ, 900 mΩ 1.5V - -12 V, -8 V, +12 V, +8 V SOT-363 (SC-88) Surface Mount 6 Isolated Enhancement Small Signal 550 mW 160 pF@ -8 V, 33 pF@ 20 V 1.3 nC @ 4.5 V, 2.2 nC @ 4.5 V 2.2 x 1.35 x 1mm 500 ns, 786 ns - 13 ns, 83 ns - 1.35mm 1mm 2.2mm - - +150 °C 2 -55 °C Si -
SI1062X-T1-GE3 N-Channel MOSFET, 530 mA, 20 V, 3-Pin SOT-523 Vishay Vishay N 530 mA 20 V 762 mΩ - 0.4V -8 V, +8 V SOT-523 (SC-89) Surface Mount 3 Single Enhancement Power MOSFET 220 mW 43 pF @ 10 V 1.8 nC @ 8 V 1.7 x 0.95 x 0.8mm 16 ns - 2 ns - 0.95mm 0.8mm 1.7mm - - +150 °C 1 -55 °C Si -
DMP3056LSS-13 P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP Diodes Inc DiodesZetex P 6 A 30 V 65 mΩ 2.1V - -20 V, +20 V SOP Surface Mount 8 Single Enhancement - 2.5 W 722 pF @ -25 V 13.7 nC @ 10 V 5.3 x 4.1 x 1.5mm 26.5 ns - 6.4 ns - 4.1mm 1.5mm 5.3mm - - +150 °C 1 -55 °C Si -
BSS223PWH6327XTSA1 P-Channel MOSFET, 310 mA, 20 V OptiMOS P, 3-Pin SOT-323 Infineon
  • S$ 0,084
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Infineon P 310 mA 20 V 2.1 Ω 1.2V 0.6V -12 V, +12 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Small Signal 250 mW 45 pF @ -15 V 0.5 nC @ 4.5 V 2 x 1.25 x 0.8mm 5.1 ns OptiMOS P 3.8 ns - 1.25mm 0.8mm 2mm - - +150 °C 1 -55 °C Si -
NTJS3151PT1G P-Channel MOSFET, 3.3 A, 12 V, 6-Pin SOT-363 ON Semiconductor ON Semiconductor P 3.3 A 12 V 160 mΩ 0.4V - -12 V, +12 V SOT-363 (SC-88) Surface Mount 6 Single Enhancement - 625 mW 850 pF @ -12 V 8.6 nC @ 4.5 V 2.2 x 1.35 x 1mm 3500 ns - 860 ns - 1.35mm 1mm 2.2mm - - +150 °C 1 -55 °C Si -
BSS123NH6433XTMA1 N-Channel MOSFET, 190 mA, 100 V OptiMOS, 3-Pin SOT-23 Infineon
  • S$ 0,109
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Infineon N 190 mA 100 V 10 Ω 1.8V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 500 mW 15.7 pF @ 25 V 0.6 nC @ 10 V 2.9 x 1.3 x 1mm 7.4 ns OptiMOS 2.3 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
NX3008NBKS,115 Dual N-Channel MOSFET, 350 mA, 30 V, 6-Pin SOT-363 Nexperia Nexperia N 350 mA 30 V 2.8 Ω 1.1V 0.6V -8 V, +8 V SOT-363 (SC-88) Surface Mount 6 Isolated Enhancement - 445 mW 34 pF @ 15 V 0.52 nC @ 4.5 V 2.2 x 1.35 x 1mm 69 ns - 15 ns - 1.35mm 1mm 2.2mm - - +150 °C 2 -55 °C Si -
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Anda melihat 1 - 20 dari 5601 hasil