MOSFETs

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Rincian Komponen Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
BSS138NH6327XTSA2 N-Channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon
  • S$ 0,089
  • Each (On a Reel of 500)
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Infineon N 230 mA 60 V 6 Ω 1.4V 0.6V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 360 mW 32 pF @ 25 V 1 nC @ 10 V 2.9 x 1.3 x 1mm 6.7 ns SIPMOS 2.3 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
BSZ058N03LSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon Infineon N 40 A 30 V 8.9 mΩ 2.2V 1V -20 V, +20 V TSDSON Surface Mount 8 Single Enhancement Power MOSFET 45 W 1800 pF @ 15 V 22 nC @ 10 V 3.4 x 3.4 x 1.1mm 19 ns OptiMOS 3 4.6 ns - 3.4mm 1.1mm 3.4mm - - +150 °C 1 -55 °C Si -
BSS223PWH6327XTSA1 P-Channel MOSFET, 310 mA, 20 V OptiMOS P, 3-Pin SOT-323 Infineon
  • S$ 0,084
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Infineon P 310 mA 20 V 2.1 Ω 1.2V 0.6V -12 V, +12 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Small Signal 250 mW 45 pF @ -15 V 0.5 nC @ 4.5 V 2 x 1.25 x 0.8mm 5.1 ns OptiMOS P 3.8 ns - 1.25mm 0.8mm 2mm - - +150 °C 1 -55 °C Si -
DMN2065UW-7 N-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-323 Diodes Inc DiodesZetex N 3.1 A 20 V 140 mΩ 1V - -12 V, +12 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Power MOSFET 700 mW 400 pF @ 10 V 5.4 nC @ 4.5 V 2.2 x 1.35 x 1mm 23.8 ns - 3.5 ns - 1.35mm 1mm 2.2mm - - +150 °C 1 -55 °C Si -
DMP3056LSS-13 P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP Diodes Inc DiodesZetex P 6 A 30 V 65 mΩ 2.1V - -20 V, +20 V SOP Surface Mount 8 Single Enhancement - 2.5 W 722 pF @ -25 V 13.7 nC @ 10 V 5.3 x 4.1 x 1.5mm 26.5 ns - 6.4 ns - 4.1mm 1.5mm 5.3mm - - +150 °C 1 -55 °C Si -
BSS138WH6327XTSA1 N-Channel MOSFET, 280 mA, 60 V SIPMOS, 3-Pin SOT-323 Infineon
  • S$ 0,102
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Infineon N 280 mA 60 V 6 Ω 1.4V 0.6V -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Small Signal 500 mW 32 pF @ 25 V 1 nC @ 10 V 2 x 1.25 x 0.8mm 6.7 ns SIPMOS 2.2 ns - 1.25mm 0.8mm 2mm - - +150 °C 1 -55 °C Si -
BSS84,215 P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia Nexperia P 130 mA 50 V 10 Ω 2V 0.8V -20 V, +20 V SOT-23 (TO-236AB) Surface Mount 3 Single Enhancement Small Signal 250 mW 25 pF@ 25 V - 3 x 1.4 x 1mm - - - - 1.4mm 1mm 3mm - - +150 °C 1 -65 °C Si -
DMP1022UFDE-7 P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DiodesZetex P 9.1 A 12 V 95 mΩ 0.8V - -8 V, +8 V U-DFN2020 Surface Mount 6 Single Enhancement Power MOSFET 2.03 W 2953 pF @ -4 V 28.4 nC @ 5 V 2.05 x 2.05 x 0.58mm 117 ns - 20 ns - 2.05mm 0.58mm 2.05mm - - +150 °C 1 -55 °C Si -
STR2N2VH5 N-Channel MOSFET, 2.3 A, 20 V STripFET V, 3-Pin SOT-23 STMicroelectronics STMicroelectronics N 2.3 A 20 V 40 mΩ - 0.7V -8 V, +8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 350 mW 550 pF @ 16 V 6 nC @ 4.5 V 3.04 x 1.75 x 1.3mm - STripFET V - - 1.75mm 1.3mm 3.04mm - - +150 °C 1 -55 °C Si -
NTA4001NT1G N-Channel MOSFET, 240 mA, 20 V, 3-Pin SOT-416 ON Semiconductor ON Semiconductor N 240 mA 20 V 3.5 Ω 1.5V - -10 V, +10 V SOT-416 (SC-75) Surface Mount 3 Single Enhancement Small Signal 300 mW 11.5 pF @ 5 V - 1.65 x 0.9 x 0.8mm 98 ns - 13 ns - 0.9mm 0.8mm 1.65mm - - +150 °C 1 -55 °C Si -
BSS138LT1G N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 40 pF@ 25 V - 2.9 x 1.3 x 0.94mm 20 ns - 20 ns - 1.3mm 0.94mm 2.9mm - - +150 °C 1 -55 °C Si -
BSS119NH6327XTSA1 N-Channel MOSFET, 190 mA, 100 V OptiMOS, 3-Pin SOT-23 Infineon
  • S$ 0,168
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Infineon N 190 mA 100 V 10 Ω 2.3V 1.3V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 500 mW 15.7 pF @ 25 V 0.6 nC @ 10 V 2.9 x 1.3 x 1mm 7 ns OptiMOS 2.7 ns - 1.3mm 1mm 2.9mm - - +150 °C 1 -55 °C Si -
SI1062X-T1-GE3 N-Channel MOSFET, 530 mA, 20 V, 3-Pin SOT-523 Vishay Vishay N 530 mA 20 V 762 mΩ - 0.4V -8 V, +8 V SOT-523 (SC-89) Surface Mount 3 Single Enhancement Power MOSFET 220 mW 43 pF @ 10 V 1.8 nC @ 8 V 1.7 x 0.95 x 0.8mm 16 ns - 2 ns - 0.95mm 0.8mm 1.7mm - - +150 °C 1 -55 °C Si -
2N7002-7-F N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc DiodesZetex N 115 mA 60 V 13.5 Ω 2.5V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 300 mW 22 pF@ 25 V - 3 x 1.4 x 1.1mm 11 ns - 7 ns - 1.4mm 1.1mm 3mm - - +150 °C 1 -55 °C Si -
NTA7002NT1G N-Channel MOSFET, 150 mA, 30 V, 3-Pin SOT-416 ON Semiconductor ON Semiconductor N 150 mA 30 V 7.5 Ω 1.5V - -10 V, +10 V SOT-416 (SC-75) Surface Mount 3 Single Enhancement Small Signal 300 mW 11.5 pF @ 5 V - 1.65 x 0.9 x 0.8mm 98 ns - 13 ns - 0.9mm 0.8mm 1.65mm - - +150 °C 1 -55 °C Si -
FDMA530PZ P-Channel MOSFET, 6.8 A, 30 V PowerTrench, 6-Pin MLP ON Semiconductor ON Semiconductor P 6.8 A 30 V 35 mΩ - 1V -25 V, +25 V MLP Surface Mount 6 Single Enhancement Power MOSFET 2.4 W 805 pF @ 15 V 16 nC @ 10 V 2 x 2 x 0.75mm 43 ns PowerTrench 6 ns - 2mm 0.75mm 2mm - - +150 °C 1 -55 °C Si -
IRF9333TRPBF P-Channel MOSFET, 9.2 A, 30 V HEXFET, 8-Pin SOIC Infineon Infineon P 9.2 A 30 V 32 mΩ 2.4V 1.3V -20 V, +20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 1110 pF @ -25 V 14 nC @ 4.5 V, 25 nC @ 10 V 5 x 4 x 1.5mm 55 ns HEXFET 16 ns - 4mm 1.5mm 5mm - - +150 °C 1 -55 °C Si -
TSM6968DCA RVG Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi Taiwan Semiconductor N 6.5 A 20 V 22 mΩ 1V - -12 V, +12 V TSSOP Surface Mount 8 Common Drain Enhancement Power MOSFET 1.04 W 950 pF@ 10 V 15 nC @ 4.5 V 4.5 x 3.1 x 1.05mm 3700 ns - 140 ns - 3.1mm 1.05mm 4.5mm - - +150 °C 2 -55 °C Si -
IRLTS2242TRPBF P-Channel MOSFET, 6.9 A, 20 V HEXFET, 6-Pin TSOP Infineon Infineon P 6.9 A 20 V 55 mΩ 1.1V 0.4V -12 V, +12 V TSOP Surface Mount 6 Single Enhancement Power MOSFET 2 W 905 pF @ -10 V 12 nC @ 4.5 V 3 x 1.75 x 1.3mm 81 ns HEXFET 5.8 ns - 1.75mm 1.3mm 3mm - - +150 °C 1 -55 °C Si -
BSS123LT1G N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 170 mA 100 V 6 Ω 2.8V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 20 pF@ 25 V - 2.9 x 1.3 x 0.94mm 40 ns - 20 ns - 1.3mm 0.94mm 2.9mm - - +150 °C 1 -55 °C Si -
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Anda melihat 1 - 20 dari 4315 hasil